Method for forming fine grooves and stamper and structure...

Details Method for forming fine grooves and stamper and structure... Method for forming fine grooves and stamper and structure...

2005-12-13

2005-12-13

Hassanzadeh, Parviz (Department: 1763)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

C216S002000, C216S011000, C216S039000, C216S041000

Reexamination Certificate

active

06974549

ABSTRACT:
A method for forming fine grooves including forming a first silicon-nitride layer on a substrate, forming a first poly-silicon layer on the first silicon-nitride layer, forming a second silicon-nitride layer on the first poly-silicon layer, patterning the second silicon-nitride layer, etching the first poly-silicon layer using the patterned second silicon-nitride layer as a mask, forming at least one patterned oxidized portion of the first poly-silicon layer by oxidizing the substrate, first silicon-nitride layer, etched first poly-silicon layer, and patterned second silicon-nitride layer, removing the patterned second silicon-nitride layer and etched first poly-silicon layer such that the first silicon-nitride layer and at least one patterned oxidized portion of the first poly-silicon layer remain on the substrate, and forming a plurality of fine grooves over the substrate by plasma etching the first silicon-nitride layer using the at least one patterned oxidized portion of the first poly-silicon layer as a mask.

REFERENCES:
patent: 4083098 (1978-04-01), Nicholas
patent: 4568410 (1986-02-01), Thornquist
patent: 5144552 (1992-09-01), Abe
patent: 5482885 (1996-01-01), Lur et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6429123 (2002-08-01), Tseng
patent: 2002/0094648 (2002-07-01), Lim et al.
patent: 5-3191 (1993-01-01), None
patent: 8-288499 (1996-11-01), None

Affiliated with

Also associated with

Rating

Method for forming fine grooves and stamper and structure... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming fine grooves and stamper and structure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming fine grooves and stamper and structure... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3497726