Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2009-06-09
2011-10-11
Huff, Mark F (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S005000, C430S312000, C430S394000
Reexamination Certificate
active
08034544
ABSTRACT:
A method for forming a fine contact hole of a semiconductor device comprises performing two-step etching processes using a first exposure mask including a plurality of rectangular light transmitting regions each having a given pitch and a second exposure mask including a plurality of rectangular light transmitting regions arranged a shielding region of the first exposure mask with a ‘cross (+)’ shape in the center of rectangular light transmitting regions of the second exposure mask. Each of four corner regions of the light transmitting regions of the first exposure mask is overlapped with four corner regions of rectangular light transmitting regions of the second exposure mask. As a result, the fine contact hole pattern obtained by the method has a uniform size.
REFERENCES:
patent: 6861176 (2005-03-01), Wu et al.
patent: 2004/0137375 (2004-07-01), Nolscher
patent: 2004/0234900 (2004-11-01), Schroeder
patent: 2009/0258318 (2009-10-01), Chan
patent: 1020030001986 (2003-01-01), None
patent: 1020080084253 (2008-09-01), None
patent: WO 97/45772 (1997-12-01), None
Toshiyuki Toyoshima et al., “0.1 μm Level Contact Hole Pattern Formation with KrF Lithography by Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS),” IEEE, 1998, pp. 333-336.
Fraser Stewart
Huff Mark F
Hynix / Semiconductor Inc.
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