Method for forming film

Details Method for forming film Method for forming film

2006-06-13

2006-06-13

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C438S680000, C438S685000

Reexamination Certificate

active

07060614

ABSTRACT:
In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST2). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST3). By carrying out the initiation step (ST2) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.

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