Method for forming field oxide regions

Details Method for forming field oxide regions Method for forming field oxide regions

1992-03-10

1994-02-15

Fourson, George

Fishing, trapping, and vermin destroying

437968, H01L 2176

Patent

active

052866726

ABSTRACT:
A method for forming field oxide regions which results in reduced diffusion of the channel stop implant into the active regions of the substrate. According to the present invention, an opening is formed through an oxidation barrier to define the field oxide regions. A dielectric layer is then deposited over the device, followed by implantation of a channel stop region. With the dielectric layer in place, the field oxide region is formed. During formation of the field oxide, the channel stop region will not diffuse into the active regions in the substrate. The thickness and conformality of the dielectric layer will affect the distance that the channel stop implant resides from the edges of the field oxide region.

REFERENCES:
patent: 4637128 (1987-01-01), Mizatani
Han, Yu-Pin, et al, "Isolation Process . . . MOS/VLSI", ECS Extended Abstracts 841 (1984) Abstract 67 p. 90.

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