Method for forming field oxide of semiconductor device using wet

Details Method for forming field oxide of semiconductor device using wet Method for forming field oxide of semiconductor device using wet

1997-10-28

1999-11-16

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, H01L 21762

Patent

active

059857382

ABSTRACT:
A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.

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S. Wolf, Silicon Processing for the VLSI Era, vol. 3, Lattice Press, p. 342, 1995.

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