Method for forming field oxide having uniform thickness

Details Method for forming field oxide having uniform thickness Method for forming field oxide having uniform thickness

1995-08-11

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 438444, 438702, H01L 2176

Patent

active

056610734

ABSTRACT:
A method for forming a semiconductor device comprises the steps of providing a semiconductor substrate having first and second surfaces, the second surface having an inferior plane with respect to the first surface. An oxidizing-resistant layer such as nitride is formed on the first surface, and an oxidizable material is formed over the first and second surfaces. A protective material is formed over the first and second surfaces, which is then removed from the first surface. Subsequent to the step of removing the protective material from the first surface, the oxidizable material is removed from the first surface and is left over the second surface. Subsequent to the step of removing the oxidizable material from the first surface, the protective material is removed from the second surface and the oxidizable material remains over the second surface. Subsequent to removing the protective material from the second surface, the oxidizable material on the second surface is oxidized. A field oxide formed by oxidizing the poly can be self-limiting and very uniform, thereby avoiding the commonly observed field oxide thinning effect in tight pitch areas.

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D. H. Ahn, S. J. Ahn, P. B. Griffin*, M. W. Hwang, W. S. Lee, S. T. Ahn,C. G. Hwang, and M. Y. Lee, "A Highly Modified LOCOS Isolation Technology for the 256 Mbit DRAM", IEDM, 1994, pp. 28.3.1.-28.3.4.

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