Method for forming field oxide film of semiconductor device

Details Method for forming field oxide film of semiconductor device Method for forming field oxide film of semiconductor device

1997-10-30

2000-01-11

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438444, 438439, 438445, H01L 2176

Patent

active

060135611

ABSTRACT:
A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.

REFERENCES:
patent: 4278705 (1981-07-01), Agraz-Guerena et al.
patent: 4965221 (1990-10-01), Dennison et al.
patent: 4981813 (1991-01-01), Bryant et al.
patent: 5057463 (1991-10-01), Bryant et al.
patent: 5139964 (1992-08-01), Onishi et al.
patent: 5151381 (1992-09-01), Liu et al.
patent: 5637528 (1997-06-01), Higashitani et al.
patent: 5637529 (1997-06-01), Jang et al.
patent: 5714414 (1998-02-01), Lee et al.

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