Method for forming field effect transistor having multiple gate

Details Method for forming field effect transistor having multiple gate Method for forming field effect transistor having multiple gate

1998-02-25

1999-05-04

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438268, M01L 2100, M01L 21336

Patent

active

058997105

ABSTRACT:
A field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source and drain regions and gate electrodes disposed to at least three surfaces surrounding the channel region. The structure can increase the number of carriers induced in the channel region and enhance the current driving performance and mutual conductance as compared with the single gate structure or double gate structure.

REFERENCES:
patent: 4254430 (1981-03-01), Beneking
patent: 4538165 (1985-08-01), Chang et al.
patent: 4609889 (1986-09-01), Kumar
patent: 4651180 (1987-03-01), Nishizawa
patent: 4698654 (1987-10-01), Kohn
patent: 5012305 (1991-04-01), Khadder et al.
patent: 5084744 (1992-01-01), Hori et al.
patent: 5321289 (1994-06-01), Baba et al.
patent: 5497019 (1996-03-01), Mayer et al.

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