Method for forming ETOX cell using self-aligned source etching p

Details Method for forming ETOX cell using self-aligned source etching p Method for forming ETOX cell using self-aligned source etching p

1997-12-18

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438184, 438257, 438297, H01L 2176

Patent

active

060966246

ABSTRACT:
A method for forming ETOX cells (Intel Type Flash EPROM Cell) using a self-aligned source etching process comprising the steps of depositing a silicon nitride layer up to a thickness of 100 .ANG. to 700 .ANG., and then etching back the layer to form spacers. Thereafter, common source regions are defined using a photomask, and then the field oxide layer is etched using either a wet etching method or a dry etching method having a high selectivity ratio. The spacers are capable of protecting the oxide
itride/oxide ONO layer against any damages during processing, thereby avoiding charge retention and reliability problems.

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patent: 5661057 (1997-08-01), Fujiwara
patent: 5741735 (1998-04-01), Violette et al.
patent: 5882973 (1999-03-01), Gardner et al.
S. Wolf Silicon Processing for the VSLI Era vol. 3 Lattice Press pp. 504, 514, 595-596, 634-635, 1990.

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