Method for forming element isolating film of semiconductor devic

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438445, H01L 2176

Patent

active

059407190

ABSTRACT:
A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices. The method includes the steps of sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate, over-etching the first nitride film and the pad oxide film by use of an element isolating mask, thereby forming a first hole in the semiconductor substrate, cleaning the entire upper surface of the resulting structure by use of an etch solution, forming second-nitride film spacers on side walls of the selectively etched first nitride film, pad oxide film and first hole, forming a second hole in the first hole of the semiconductor substrate by use of the first nitride film and second-nitride film spacers as a mask, thermally oxidizing the surface of the second hole, thereby forming a thermal oxide film, and removing the first nitride film, pad oxide film and second-nitride film spacers, thereby forming an element isolating film.

REFERENCES:
patent: 4561172 (1985-12-01), Slawinski et al.
patent: 4583281 (1986-04-01), Ghezzo et al.
patent: 5139964 (1992-08-01), Onishi et al.
patent: 5246537 (1993-09-01), Cooper et al.
patent: 5374584 (1994-12-01), Lee et al.
Ghandhi, S. , VLSI Fabrication Priciples: Silicon and Gallium Arsenide, John Wiley and Sons, pp. 517-520, 1983.
Wolf, S., et al, Silicon Processing for the VSLI Era:vol. 1, Process Technology, Lattice Press, pp. 439-414, 1986.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming element isolating film of semiconductor devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming element isolating film of semiconductor devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming element isolating film of semiconductor devic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-325156

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.