Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-09
1999-02-09
Trinh, Michael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438105, 430311, 148DIG100, 148DIG148, H01L 2144, H01L 2100
Patent
active
058693904
ABSTRACT:
Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.
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Kato Rie
Kobashi Koji
Koyama Hisashi
Miyauchi Shigeaki
Nishimura Kozo
Kabushiki Kaisha Kobe Seiko Sho
Trinh Michael
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