Method for forming dual damascenes

Details Method for forming dual damascenes Method for forming dual damascenes

2005-09-20

2005-09-20

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S709000, C438S740000, C438S947000, C438S976000

Reexamination Certificate

active

06946391

ABSTRACT:
A method for forming a dual damascene structure in a semiconductor device manufacturing process including providing a process wafer including a via opening extending through at least one dielectric insulating layer; blanket depositing a negative photoresist layer to include filling the via opening; blanket depositing a positive photoresist layer over and contacting the negative photoresist layer; photolithographically patterning the positive photoresist layer to form a trench opening etching pattern overlying and encompassing the via opening; etching back the negative photoresist layer to form a via plug having a predetermined thickness; and, etching a trench opening according to the trench opening etching pattern.

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