Method for forming dual damascene structure

Details Method for forming dual damascene structure Method for forming dual damascene structure

1998-04-17

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438631, 438633, 438634, 438637, 438638, 438640, 438675, 438692, 438701, 438703, 438761, 438713, 438948, 430311, 430312, 430314, 430316, 430317, H01L 21314

Patent

active

059899972

ABSTRACT:
A method for forming dual damascene metallic structure that utilizes the formation of a protective photoresist layer at the bottom of a vertical window to prevent damages to a device region in the substrate when subsequent etching operation is carried out to form a horizontal trench pattern. The protective photoresist layer at the bottom of the vertical window is formed by irradiating the photoresist layer with a dose of radiation having energy level insufficient to chemically dissociate the photoactive molecules of the photoresist layer near the bottom of the vertical window.

REFERENCES:
patent: 5328553 (1994-07-01), Poon
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5880018 (1999-03-01), Boeck et al.
patent: 5897375 (1999-04-01), Watts et al.
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 5935762 (1999-08-01), Dai et al.

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