Method for forming diffusion barrier layers

Details Method for forming diffusion barrier layers Method for forming diffusion barrier layers

1998-07-30

2000-05-30

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438653, H01L 2128

Patent

active

060690739

ABSTRACT:
An improved method for forming diffusion barrier layers for sub-micron connects in integrated circuits is disclosed. The dual diffusion barriers is easily formed according to two-step annealing processes. The anneal includes two anneal cycles or steps, each cycle is performed at a separate and distinct temperature cycles. Each cycle is performed in the presence of ammonia (NH3) or nitrogen ambient. As a result of the first low-temperature cycle, a nitridation occurs at the upper surface to form a binary diffusion barrier layer. As a result of the second high-temperature cycle, an out-diffusion of silicon ions occurs at the lower surface to form a ternary alloys. The dual diffusion barriers obtained by a simple and easy two-step anneal processing exhibits an improved barrier performance. Furthermore, it is possible to form highly stable multilevel interconnections without any deterioration problems by reducing the sophisticated processing steps.

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