Method for forming diffusion barrier layer

Details Method for forming diffusion barrier layer Method for forming diffusion barrier layer

1996-09-18

1999-03-23

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438648, 438660, H01L 2144

Patent

active

058858989

ABSTRACT:
The present invention relates to a method for forming a diffusion barrier layer, the method comprising the steps of: forming an insulation membrane having an opening for exposing a diffusion region to a silicon substrate formed with the diffusion region of a predetermined conductivity; vacuum-evaporating a metal of high melting point to surface and sides of the insulation membrane and to an upper area of the diffusion region, to thereby form a metal layer; and forming on the metal layer a low resistance layer and a diffusion barrier layer according to first and second quick heating treatment steps under nitric or ammoniac atmosphere. Accordingly, the low resistance layer can be thinned out while the diffusion prevention layer can be quickly formed to thereby improve diffusion prevention characteristic and to reduce stress from an interface with the semiconductor substrate. Furthermore, the interface between the silicon substrate and the low resistance layer can be made even to thereby reduce volume change of the low resistance layer, so that junction leakage can be prevented.

REFERENCES:
patent: 5043300 (1991-08-01), Nulman
patent: 5612253 (1997-03-01), Farahani et al.
A. Kalnitsky, et al "Effect of Low-Temperature RTA on the Conductivity of AsImplanted Layers . . . " J. Electrochem. Soc. vol. 141 No. 8 Aug. 1994 p. 2223.
N. Brun, et al. "TiSi.sub.2 Integration in a Submicron CMOS Process" J. Electrochem. Soc. vol. 142, No. 6 p. 1987, Jun. 1995.
Journal of Vacuum Science & Technology A; Second Series vol. 14, No. 6 Nov./Dec. 1996; Youn Tae Kim, Chi-Hoon Jun, Jin-Ho Lee, Jong Tae Baek, and Hyung Joun Yoo; pp. 3245-3251.

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