Method for forming dielectric layer of capacitor

Details Method for forming dielectric layer of capacitor Method for forming dielectric layer of capacitor

2002-11-12

2008-08-26

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S381000, C438S329000

Reexamination Certificate

active

07416904

ABSTRACT:
A fabrication method for forming a semiconductor device having a capacitor is provided. A capacitor dielectric layer is formed by depositing a first layer and a second layer. The second layer is a major portion of the capacitor dielectric layer. The first layer acts as a seed layer, while the second layer is expitaxially grown. The material of the second layer as deposited is partially crystal. Nuclear generation and crystal growth occur separately so that the crystalline characteristic of the capacitor dielectric layer and the capacitance characteristic of the capacitor are enhanced. Moreover, the capacitor dielectric layer is crystallized at a relatively low temperature or for a relatively short time, thereby reducing leakage current as well as reducing deformation in the lower electrode. Optionally, The material of the second layer as deposited is not partially crystal but amorphous.

REFERENCES:
patent: 4371421 (1983-02-01), Fan et al.
patent: 5492859 (1996-02-01), Sakaguchi et al.
patent: 5495823 (1996-03-01), Kobayashi
patent: 5587870 (1996-12-01), Anderson et al.
patent: 5688724 (1997-11-01), Yoon et al.
patent: 5788447 (1998-08-01), Yonemitsu et al.
patent: 5893949 (1999-04-01), King et al.
patent: 5970352 (1999-10-01), Shiozawa et al.
patent: 6218233 (2001-04-01), Takemura
patent: 6232248 (2001-05-01), Shinriki et al.
patent: 6270587 (2001-08-01), Motoki et al.
patent: 6297527 (2001-10-01), Agarwal et al.
patent: 6313047 (2001-11-01), Hasebe et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 6326316 (2001-12-01), Kiyotoshi et al.
patent: 6368945 (2002-04-01), Im
patent: 6528328 (2003-03-01), Aggarwal et al.
patent: 6544834 (2003-04-01), Sugawara et al.
patent: 6596547 (2003-07-01), Aggarwal et al.
patent: 6693044 (2004-02-01), Yamazaki et al.
patent: 6815221 (2004-11-01), Kim et al.
patent: 2001/0018267 (2001-08-01), Shinriki et al.
patent: 2001/0024853 (2001-09-01), Wallace et al.
patent: 2001/0027031 (2001-10-01), Hasebe et al.
patent: 2002/0006674 (2002-01-01), Ma et al.
patent: 2003/0008521 (2003-01-01), Bojarczuk et al.
patent: 2003/0013263 (2003-01-01), Basceri et al.
patent: 2003/0020122 (2003-01-01), Joo et al.
patent: 2003/0085426 (2003-05-01), Kondo et al.
patent: 2003/0119251 (2003-06-01), Aggarwal et al.

Affiliated with

Also associated with

Rating

Method for forming dielectric layer of capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming dielectric layer of capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming dielectric layer of capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4007615