Method for forming dielectric film using porogen gas

Details Method for forming dielectric film using porogen gas Method for forming dielectric film using porogen gas

2011-06-07

2011-06-07

Turocy, David (Department: 1717)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S248100, C427S255280, C427S008000

Reexamination Certificate

active

07955650

ABSTRACT:
A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increasing a ratio of B/(A+B) used as a parameter for controlling a dielectric constant of a cured film, by a degree substantially or nearly in proportion to a target decrease of dielectric constant of a cured film; applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; and curing the film to remove the porogen material, thereby forming pores in the cured film.

REFERENCES:
patent: 6846515 (2005-01-01), Vrtis et al.
patent: 7056560 (2006-06-01), Yim et al.
patent: 7241704 (2007-07-01), Wu et al.
patent: 7297376 (2007-11-01), Yim et al.
patent: 2006/0078676 (2006-04-01), Lukas et al.

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