Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2007-02-12
2010-10-19
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S613000, C257SE21174, C257SE21508
Reexamination Certificate
active
07816277
ABSTRACT:
A deposit forming method including ejecting droplets of a deposit forming material onto a substrate, thereby forming a deposit by the droplets on the substrate, is provided. The droplets are ejected along a direction inclined at a predetermined angle in a predetermined direction with respect to a normal line of the substrate and at a predetermined pitch in the predetermined direction. The predetermined angle is set in correspondence with the diameter of each of the droplets and the predetermined pitch in such a manner that the dimension of a dot formed by each droplet on the substrate in the predetermined direction becomes greater than or equal to the predetermined pitch.
REFERENCES:
patent: 7604848 (2009-10-01), Iwata
patent: 2006/0214993 (2006-09-01), Iwata
patent: 2005-053186 (2005-03-01), None
patent: 2005-131498 (2005-05-01), None
patent: 2005-296854 (2005-10-01), None
Hiruma Kei
Iwata Yuji
Kasuga Osamu
Harness & Dickey & Pierce P.L.C.
Lindsay, Jr. Walter L
Seiko Epson Corporation
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