Method for forming dense dry etched multi-level metallurgy with

Details Method for forming dense dry etched multi-level metallurgy with Method for forming dense dry etched multi-level metallurgy with

1977-10-20

1979-10-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29578, 29591, 156646, 156652, 156656, 156659, 204192EC, 204192E, 357 71, 427 90, C23F 102

Patent

active

041720040

ABSTRACT:
A double level metal interconnection structure and process for making same are disclosed, wherein an etch-stop layer is formed on the first metal layer to prevent over-etching thereof when forming the second level metal line in a via hole in an insulating layer thereover, by means of reactive plasma etching. The etch-stop layer is composed of chromium and the reactive plasma etching is carried out with a halocarbon gas.

REFERENCES:
patent: 3804738 (1974-04-01), Lechaton et al.
patent: 3856648 (1974-12-01), Fuller et al.
patent: 3868723 (1975-02-01), Lechaton et al.
patent: 3880684 (1975-04-01), Abe
patent: 3881971 (1975-05-01), Greer et al.
patent: 3900944 (1975-08-01), Fuller et al.
patent: 3930913 (1976-01-01), Jacob
patent: 3951709 (1976-04-01), Jacob
patent: 3969197 (1976-07-01), Tolar et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4076575 (1978-02-01), Chang
IBM Technical Disclosure Bulletin, vol. 19, No. 11, Apr. 1977, Via Holes In Quartz Coatings by Sarkany et al., pp. 4152-4153.

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