Method for forming Cu In Se.sub.2 films

Details Method for forming Cu In Se.sub.2 films Method for forming Cu In Se.sub.2 films

1986-12-22

1989-01-17

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419225, 20419226, C23C 1438

Patent

active

047986603

ABSTRACT:
A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.

REFERENCES:
patent: 4335266 (1982-06-01), Mickelsen et al.
patent: 4465575 (1984-08-01), Love et al.
patent: 4581108 (1986-04-01), Kapur et al.
T. L. Chu et al., Large Grain Copper Indium Diselenide Films, J. Electrochem. Soc.: Solid State Science and Technology, Sep. 1984, pp. 2182-2185.
J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 167-170.
S. P. Grindle et al., Preparation and Properties of CuInS.sub.2 Thin Films . . . , Appl. Phys. Lett., 35(1), Jul. 1, 1979, pp. 24-26.
J. Piekoszewski et al., RF-Sputtered CuInSe.sub.2 Thin Films, Solar Energy Materials, 2(1980), pp. 363-372.
M. S. Tomar et al., A ZnO/p-CuInSe.sub.2 Thin Film Solar Cell . . . , Thin Solid Films, 90(1982), pp. 419-423.
Chemical Vapor Deposited Copper Indium Diselenide Thin Film Materials Research, Poly Solar Inc., Garland, Tex., Mar. 1984, SERI/STR-211-2247.

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