Method for forming crystals

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156603, 156610, 156612, 156613, 156614, 156DIG64, 156DIG73, C30B 1700

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active

051906139

ABSTRACT:
A method for forming a crystal, which comprises applying, on a substrate having a primary seed comprising a non-single crystaline material having a surface area fine enough to be agglomeratable into a single single-crystalline body by heat treatment and a non-nucleation surface with smaller nucleation density than said primary seed, a heat treatment for agglomerating said primary seed to form a single crystalline seed in an atmosphere containing hydrogen gas at a temperature lower than the temperature at which said primary seed is melted, and applying a crystal growth treatment, thereby permitting a single crystal to grow with said seed as the origination point.

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patent: 3620833 (1971-11-01), Gleim
patent: 3634143 (1972-11-01), Brenen
patent: 3655439 (1972-04-01), Seiter
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4361600 (1982-11-01), Brown
patent: 4448632 (1984-05-01), Akasaka
patent: 4657603 (1987-04-01), Kruehler et al.
"Epitaxial Growth" Matthews; Academic Press; New York (1975) pp. 12, 21, 415 and 428.
Brice, "Crystal Growth Process," Wiley & Sons, Blackie, Bishop Brigg, Glagon, 1986 pp. 249.
Smith et al., "Graphnepitaxy and Zone Melting Recrystallization of Putunted Films," Journal of Crystal Growth, vol. 63 (1983) pp. 535-537.
Amano, "Low-Defect Density Silicon on Sapphire", J. of Crystal Growth, vol. 56 (1982), pp. 296-303.

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