Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-10-18
1993-03-02
Chaudhuri, Olik
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156603, 156610, 156612, 156613, 156614, 156DIG64, 156DIG73, C30B 1700
Patent
active
051906139
ABSTRACT:
A method for forming a crystal, which comprises applying, on a substrate having a primary seed comprising a non-single crystaline material having a surface area fine enough to be agglomeratable into a single single-crystalline body by heat treatment and a non-nucleation surface with smaller nucleation density than said primary seed, a heat treatment for agglomerating said primary seed to form a single crystalline seed in an atmosphere containing hydrogen gas at a temperature lower than the temperature at which said primary seed is melted, and applying a crystal growth treatment, thereby permitting a single crystal to grow with said seed as the origination point.
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Smith et al., "Graphnepitaxy and Zone Melting Recrystallization of Putunted Films," Journal of Crystal Growth, vol. 63 (1983) pp. 535-537.
Amano, "Low-Defect Density Silicon on Sapphire", J. of Crystal Growth, vol. 56 (1982), pp. 296-303.
Canon Kabushiki Kaisha
Chaudhuri Olik
Garrett Felisa
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