Method for forming crystalline semiconductor film and...

Details Method for forming crystalline semiconductor film and... Method for forming crystalline semiconductor film and...

2006-01-17

2006-01-17

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S168000

Reexamination Certificate

active

06987036

ABSTRACT:
The invention is directed to a countermeasure against a local amorphous region observed as an eddy pattern on a thermally crystallized crystalline silicon film. The local amorphous region is thought to result from a deficiently formed ultra-thin silicon oxide film by ozone water treatment, which causes a local phenomenon of repelling a catalyst element solution during spin coating. This inhibits a uniform addition of a catalyst element. A relationship between an ozone concentration of ozone water and a wait time between the ozone water treatment and the subsequent step of adding the catalyst element is deduced and used for planning the countermeasure against the local amorphous region.

REFERENCES:
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patent: 6074901 (2000-06-01), Ohtani et al.
patent: 6221788 (2001-04-01), Kobayashi et al.
patent: 6461931 (2002-10-01), Eldridge
patent: 07/211636 (1995-08-01), None

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