Method for forming copper wiring in semiconductor device

Details Method for forming copper wiring in semiconductor device Method for forming copper wiring in semiconductor device

2009-12-10

2011-11-01

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C438S687000, C156S345160, C257S762000, C257S763000, C257SE23145, C257SE21577, C257SE21585

Reexamination Certificate

active

08048799

ABSTRACT:
A method for forming copper wirings in a semiconductor device may include depositing a lower insulating film over a semiconductor substrate; forming vias in the lower insulating film; depositing tungsten over the entire surface of upper portion of the lower insulating film so that the vias are gap-filled with the tungsten; forming tungsten plugs by performing a tungsten chemical mechanical polishing process to remove excess tungsten deposited over the upper portion of the lower insulating film; removing the tungsten remaining over the upper portion of the lower insulating film by performing a tungsten etchback process; depositing an upper insulating film over the upper portion of the lower insulating film; exposing upper portions of the tungsten plugs by forming trenches on the upper insulating film; depositing copper over the entire surface of the upper insulating film so that the trenches are gap-filled with the copper; and planarizing the copper over the upper portion of the trenches.

REFERENCES:
patent: 7736474 (2010-06-01), Kurashina et al.

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