Method for forming contact structures in integrated circuits

Details Method for forming contact structures in integrated circuits Method for forming contact structures in integrated circuits

1994-04-12

1997-01-14

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437246, 437922, H01L 21441

Patent

active

055939201

ABSTRACT:
A structure and method for forming contact structures in integrated circuits. A buffer layer is formed over an underlying conductive element. A first conductive layer is then deposited over the buffer layer and patterned to define a first interconnect layer. While the first interconnect layer is patterned, the buffer layer protects the underlying conductive element from damage. Portions of the buffer layer which are not covered by the first interconnect layer are then removed, and a second conductive layer is deposited over the integrated circuit. The second conductive layer is then anisotropically etched to form conductive sidewall spacers alongside the vertical sidewalls of the first interconnect layer, where at least one of the conductive sidewall spacers makes electrical contact with the underlying conductive element. Therefore, a conductive contact is made between the underlying conductive element and the first interconnect layer through at least one of the conductive sidewall spacers.

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