Method for forming contact plugs of a semiconductor device

Details Method for forming contact plugs of a semiconductor device Method for forming contact plugs of a semiconductor device

1998-06-05

2000-09-19

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438697, 438700, 438706, 438745, H01L 21302

Patent

active

06121146&

ABSTRACT:
A method for forming contact plugs of a semiconductor device includes a step of forming a conductive layer on an insulating layer filling up a contact hole. The method further comprises a step of planarization-etching an upper surface of the insulating layer as well as the contact plugs, after formation of the contact plugs by etching the conductive layer using an etch-back or a CMP process until at least the upper surface of the insulating layer is exposed. Alternatively, the conductive and insulating layers are simultaneously planarization-etched using a CMP process once to form the contact plugs and planarize the upper surface of the insulating layer. With this method, a bridge between interconnections which can be generated due to a scratch of the upper surface of the insulating layer can be prevented by planarization-etching the conductive layer after filling up a contact hole with the conductive layer. Also, since the insulating layer includes a lower insulating layer and an upper insulating layer having a relatively high hardness to the lower insulating layer, high-step and low-step regions of the insulating layer formed along topology of a gate electrode or a metal interconnection are efficiently planarized. As a result, a thickness of the insulating layer can be considerably reduced.

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patent: 5773314 (1998-06-01), Jiang et al.
patent: 5915189 (1999-06-01), Sim
"Diamond-Like Films as a Barrier to Chemical-Mechanical Polish" IBM Technical Disclosure Bulletin, vol. 35, No. 1B, Jun. 1, 1992, pp. 211-213.

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