Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-01
2008-01-01
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000
Reexamination Certificate
active
07314825
ABSTRACT:
Disclosed is a method for fabricating a semiconductor device; and more particularly, to a method for fabricating a plurality of contact plugs capable of preventing a self-aligned contact (SAC) fail during forming a plurality of contact holes formed by using a SAC etching process and a defect generation during performing a plug isolation process. The present invention prevents a Pinocchio defect that is a fundamental problem caused by the chemical mechanical polishing (CMP) process and simplifies a subsequent cleaning process performed according to the particles. Accordingly, it is possible to develop products with a high quality and a high speed and to replace the CMP process having a high unit process cost with an etch back process, thereby providing an effect of increasing a price competitiveness.
REFERENCES:
patent: 6337275 (2002-01-01), Cho et al.
patent: 6403459 (2002-06-01), Ohashi et al.
patent: 6458680 (2002-10-01), Chung et al.
patent: 6518157 (2003-02-01), Nam et al.
patent: 6689697 (2004-02-01), Jiang et al.
Choi Bong-Ho
Choi Ik-Soo
Hynix / Semiconductor Inc.
Le Thao P.
Townsend & Townsend & Crew LLP
LandOfFree
Method for forming contact plug of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming contact plug of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming contact plug of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2774269