Method for forming contact plug in semiconductor device

Details Method for forming contact plug in semiconductor device Method for forming contact plug in semiconductor device

2005-01-18

2005-01-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S647000, C438S672000, C438S675000, C438S565000

Reexamination Certificate

active

06844259

ABSTRACT:
The present invention provides a method for forming a contact plug in a semiconductor device capable of preventing an increase of contact resistance even if the contact size becomes smaller and degradation of a step coverage property and of suppressing a decrease of uniformity in the contact resistance. The inventive method includes the steps of: a method for forming a contact plug in a semiconductor device, comprising the steps of: forming a contact hole by etching an insulating layer on a substrate; forming a first silicon film with a first doping concentration on the substrate in the contact hole so that the contact hole is partially filled; flushing a doping gas on a surface of the first silicon film; and forming a second silicon film having a second doping concentration higher than the first doping concentration on the first silicon film until filling the contact hole.

REFERENCES:
patent: 5475257 (1995-12-01), Hashimoto et al.
patent: 6030894 (2000-02-01), Hada et al.
patent: 6187659 (2001-02-01), Ying et al.
patent: 6249010 (2001-06-01), Bergemont et al.
patent: 6268281 (2001-07-01), Shih et al.
patent: 6362023 (2002-03-01), Bergemont et al.
patent: 10-27847 (1998-01-01), None

Affiliated with

Also associated with

Rating

Method for forming contact plug in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming contact plug in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming contact plug in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3366988