Method for forming contact plug in a semiconductor device

Details Method for forming contact plug in a semiconductor device Method for forming contact plug in a semiconductor device

2007-09-26

2011-11-01

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S633000, C438S634000, C257SE21579, C257SE21583, C257SE21585

Reexamination Certificate

active

08048803

ABSTRACT:
A method for forming a contact plug in a semiconductor device includes providing a substrate having an insulation layer. A hard mask pattern is formed over the insulation layer. The insulation layer is etched using the hard mask pattern to form a contact hole. A plug material is formed over the hard mask pattern to fill the contact hole. The insulation layer, the hard mask pattern, and the plug material are polished at substantially the same time such that a seam generated in the contact hole while forming the plug material is not exposed.

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