Method for forming contact layer on semiconductor light emitting

Details Method for forming contact layer on semiconductor light emitting Method for forming contact layer on semiconductor light emitting

1985-12-23

1987-08-11

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156662, 156664, 134 5, 134 42, 252 793, 437225, H01L 21208, H01L 21306, H01L 3300

Patent

active

046860010

ABSTRACT:
A method for producing a semiconductor light emitting device wherein a contact layer of InGaAsP is formed on a semiconductor layer, including forming the InGaAsP contact layer on the semiconductor layer; subsequently, forming an InP cover layer on the contact layer; cleaning the surface of the InP cover layer by a solution which selectively melts indium; and removing the InP cover layer by a selective etching process.

REFERENCES:
patent: 4428795 (1984-01-01), Kohl et al.

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