Method for forming contact in semiconductor device

Details Method for forming contact in semiconductor device Method for forming contact in semiconductor device

2007-01-09

2007-01-09

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21023

Reexamination Certificate

active

10882698

ABSTRACT:
Disclosed is a method for forming a contact in a semiconductor device. The method includes the steps of: forming a bit line on a substrate; forming an oxide layer made of high density plasma (HDP) oxide on a substrate structure including the bit line and the substrate; forming a hard mask on the oxide layer; and performing an etching process for forming a storage node contact, wherein the etching process is performed after the bit line, the oxide layer and the hard mask are formed with a predetermined thickness and a predetermined tensile stress such that a total compressive stress value of the bit line, the oxide layer and the hard mask layer is less than a critical value of a lifting phenomenon.

REFERENCES:
patent: 6579753 (2003-06-01), Yamanobe
patent: 6699749 (2004-03-01), Lee et al.
patent: 2003/0129847 (2003-07-01), Celii et al.
patent: 2004/0058496 (2004-03-01), Lee
patent: 2004/0058522 (2004-03-01), Lee et al.

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