Method for forming contact in semiconductor device

Details Method for forming contact in semiconductor device Method for forming contact in semiconductor device

2006-06-13

2006-06-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S599000

Reexamination Certificate

active

07060610

ABSTRACT:
The present invention relates to a method for forming a contact in a semiconductor device. The method includes the steps of: forming a P-type source/drain junction in a substrate; forming an inter-layer insulation layer on the substrate; forming a contact hole exposing at least one portion of the P-type source/drain junction by etching the inter-layer insulation layer; forming a plug ion implantation region by implanting boron fluoride ions into the exposed portion of the P-type source/drain junction, the boron fluoride ion having the less bonding number of fluorine than49BF2; performing an activation annealing process for activating dopants implanted into the plug ion implantation region; and forming a contact connected to the P-type source/drain junction through the contact hole.

REFERENCES:
patent: 6670671 (2003-12-01), Sasago et al.
patent: 6888196 (2005-05-01), Kobayashi
patent: 1020040026332 (2004-03-01), None

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