Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1996-06-28
1998-09-08
Geist, Gary
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438637, 438670, 438703, 438760, 438763, H01L 2100
Patent
active
058045155
ABSTRACT:
A method for forming contact holes of a semiconductor device, capable of preventing a photoresist film pattern used as a contact hole mask separating from a boro-phospho silicate glass (BPSG) film disposed of beneath the photoresist film pattern due to an over-etching of the BPSG film occurring when the BPSG film is wet etched. The method includes sequentially laminating a thin insulating film and a planarizing BPSG film over a semiconductor substrate, thermally treating the BPSG film at a temperature ranging from 80.degree. C. to 350.degree. C. and depositing a photoresist film over the BPSG film in a continuous manner with the same equipment used in the thermal treatment, removing a desired portion of the photoresist film, thereby forming a photoresist film pattern, wet etching an exposed portion of the BPSG film not covered with the photoresist film pattern to a desired depth, and dry etching the remaining BPSG film along with the insulating film, thereby forming contact holes. The thermal treatment of the heavily-doped BPSG film and the coating of the photoresist film are carried out in a continuous manner in the heat block of the same coating block. Accordingly, the adhesion of the photoresist film to the heavily-doped BPSG film is improved.
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WPIDS-95-112054 abstract of JP07037877, Feb. 7, 1995.
Geist Gary
Hyundai Electronics Industries Co,. Ltd.
Vollano Jean F.
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