Method for forming contact holes in semiconductor device

Details Method for forming contact holes in semiconductor device Method for forming contact holes in semiconductor device

1995-09-25

1997-09-02

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438702, 438947, 438639, H01L 2144

Patent

active

056631006

ABSTRACT:
A method for forming contact holes in a semiconductor device, involving formation of a ring-shaped pad at a contact region. The ring-shaped pad is used as an etch barrier film upon forming a contact hole. The use of such a ring-shaped pad enables easy formation of a contact hole with a critical dimension. In accordance with this method, it is possible to increase a process margin upon the formation of contact holes for providing contacts with a critical dimension while maintaining an insulation between neighboring conductors.

REFERENCES:
patent: 5087591 (1992-02-01), Teng
patent: 5279990 (1994-01-01), Sun et al.
patent: 5294296 (1994-03-01), Yoon et al.
patent: 5444021 (1995-08-01), Chung et al.

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