Method for forming contact holes having different depths

Details Method for forming contact holes having different depths Method for forming contact holes having different depths

1993-10-13

1995-08-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG51, 437189, 437228, 437981, 257774, 257775, H01L 2144

Patent

active

054440203

ABSTRACT:
A method for forming contact holes having different depths in an insulating layer which covers a semiconductor substrate. A first step selectively etches the upper parts of the insulating layer which correspond to contact holes having a greater depth than the shallowest contact hole, using a first mask pattern. A second etch step selectively etches the remainder of the insulating layer for all of the contact holes at the same time using a second mask pattern. Thus, contact hole misalignment is kept to a minimum.

REFERENCES:
patent: 4714686 (1987-12-01), Sander et al.
patent: 4764484 (1988-08-01), Mo
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4933297 (1990-06-01), Lu
patent: 5006484 (1991-04-01), Harada
patent: 5192713 (1993-03-01), Harada
patent: 5198389 (1993-03-01), Van Der Putten et al.
patent: 5210053 (1993-05-01), Yamagata
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5317193 (1994-05-01), Watanabe
patent: 5320979 (1994-06-01), Hashimoto et al.

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