Method for forming contact hole of semiconductor device

Details Method for forming contact hole of semiconductor device Method for forming contact hole of semiconductor device

2005-01-04

2005-01-04

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S637000, C438S723000, C438S724000, C438S725000, C438S738000, C438S743000, C438S744000, C438S902000, C438S906000, C438S963000

Reexamination Certificate

active

06838369

ABSTRACT:
A method for forming a contact hole of a semiconductor device, wherein a polymer residual on a bottom surface of the contact hole is treated with plasma of mixture gas containing oxygen to convert the polymer residual into a pure silicon oxide film free of carbon and fluorine for easy removal in a subsequent washing process is disclosed. The method comprises (a) sequentially forming a capping layer and a planarized interlayer insulating film on a semiconductor substrate having a predetermined lower structure; (b) selectively etching the interlayer insulating film to expose a predetermined region of the capping layer; (c) removing the exposed capping layer; (d) subjecting the resulting structure to a plasma treatment using a mixture gas containing oxygen; and (e) performing a cleaning process.

REFERENCES:
patent: 5963840 (1999-10-01), Xia et al.
patent: 6239014 (2001-05-01), Liaw
patent: 6562416 (2003-05-01), Ngo et al.
patent: 20020009893 (2002-01-01), Chung et al.
Ho Seok Lee, “Characterization of the post dry-etch treatment of the cleanness of submicron contact hole bottoms”, SEMI Technology Symposium 2003, SEMICON Korea STS 2003, Jan. 22, 2003, pp. 57, 59, 61-70.

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