Method for forming contact hole and spacer of semiconductor...

Details Method for forming contact hole and spacer of semiconductor... Method for forming contact hole and spacer of semiconductor...

2006-04-18

2006-04-18

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S595000, C438S637000, C438S669000, C438S672000

Reexamination Certificate

active

07030006

ABSTRACT:
Disclosed is a contact hole forming method capable of reducing parasitic capacitance between a conductive layer patterns, preventing bad contacts caused by mask misalignment and effectively filling an interlayer insulating layer between the conductive layer patterns. The method including forming many conductive layer patterns on a substrate, forming an interlayer insulating layer on a resulting structure where the conductive layer patterns are completed, exposing a conductive layer pattern which at least one sidewall of a contact region between conductive layer patterns is neighboring the contact region, and forming an insulating spacer on the sidewall of the exposed conductive layer pattern.

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