Method for forming conductive line of semiconductor device

Details Method for forming conductive line of semiconductor device Method for forming conductive line of semiconductor device

2006-09-05

2006-09-05

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S654000, C438S655000, C438S663000, C438S652000

Reexamination Certificate

active

07101791

ABSTRACT:
A method for conductive line of semiconductor device is disclosed. A cobalt silicide layer is formed on an impurity junction region exposed through a contact hole. The cobalt silicide layer stabilizes a contact resistance so that the contact resistance of the impurity junction region does not vary in subsequent thermal processes.

REFERENCES:
patent: 5998873 (1999-12-01), Blair et al.
patent: 6221764 (2001-04-01), Inoue
patent: 6667233 (2003-12-01), Ryoo et al.
patent: 6815235 (2004-11-01), Markle
patent: 1020010028503 (2001-04-01), None
patent: 1020010048188 (2001-06-01), None

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