Method for forming collector up heterojunction bipolar transisto

Details Method for forming collector up heterojunction bipolar transisto Method for forming collector up heterojunction bipolar transisto

1996-07-12

1997-05-20

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

257197, 438315, 438936, H01L 21265

Patent

active

056311737

ABSTRACT:
A process and structure for an improved collector-up bipolar transistor. The base is formed after the emitter is implanted to eliminate base damage during oxygen implantation typical in prior art collector-up bipolar transistors. In a preferred embodiment, an emitter layer of GaAlAs is implanted with oxygen in the extrinsic emitter region to damage the material and make it insulative. The base is epitaxially grown at low temperature to insure the emitter material remains damaged and insulative.

REFERENCES:
patent: 5266819 (1993-11-01), Chang et al.
patent: 5296389 (1994-03-01), Shimawaki
patent: 5298438 (1994-03-01), Hill
patent: 5434091 (1995-07-01), Hill et al.
patent: 5512496 (1996-04-01), Chau et al.

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