Coating processes – Electrical product produced – Condenser or capacitor
Patent
1993-06-01
1995-01-24
King, Roy V.
Coating processes
Electrical product produced
Condenser or capacitor
427 80, 427 79, 4272551, 4272552, 4272557, 427255, 4274191, 437 52, 437919, 257309, 117108, H01L 2170, B05D 512
Patent
active
053841522
ABSTRACT:
A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.
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J. C. Bean, et al., "Ge.sub.x Si.sub.1-x /Si Strained-Layer Superlattice Grown by Molecular Beam Epitaxy" J. Vac. Sci, Technol. A2 (2) pp. 436-440 (Apr.-Jun. 1984).
J. Murota, et al., "Low-Temperature Silicon Selective Deposition & Epitaxy on Silicon Using the Thermal Decomposition of Siland Under Ultraclean Environment" Appl. Phys. Lett. 54, pp. 1007-1009 (Mar. 13, 1989).
Y. Hayashide, et al., "Fabrication of Storage Capacitance-Enhanced Capacitors With a Rough Electrode" Extended Abstracts of the 22nd International Conference on Solid State Devices & Materials, pp. 869-872 (Nov. 1990).
H. Watanabe, et al., "A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes" pp. 873-876.
Extended Abstracts of the 22nd International Conference on Solid State Devices & Materials (Nov. 1990).
W. J. Varhue, et al., "Surface Morphology of Epitaxial Ge on Si Grown by Plasma Enhanced Chemical Vapor Deposition" pp. 26-28 (Oct. 1990).
Chu Jack C.
Hsu Louis Lu-Chen
Mii Toshio
Shepard Joseph F.
Stiffler Scott R.
Huberfeld Harold
International Business Machines - Corporation
King Roy V.
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