Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2005-09-20
2005-09-20
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S749000, C438S967000
Reexamination Certificate
active
06946369
ABSTRACT:
The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps:a step of forming on the substrate (12) stable nuclei (14) of a first semi-conductor material in the form of islands, by CVD from a precursor (11) of the first semi-conductor material chosen so that the dielectric material (12) accepts the formation of said nuclei (14),a step of forming nanostructures (16A,16B) of a second semi-conductor material from the stable nuclei (14) of the first semi-conductor material, by CVD from a precursor (21) chosen to generate a selective deposition of the second semi-conductor material only on said nuclei (14).The invention further concerns nanostructures formed according to one of said methods as well as devices comprising said nanostructures.
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Baron Thierry
Hartmann Jean-Michel
Mazen Frédéric
Semeria Marie-Noelle
Commissariat a l''Energie Atomique
Hoang Quoc
Nelms David
Thelen Reid & Priest LLP
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