Method for forming buried plug contacts on semiconductor integra

Details Method for forming buried plug contacts on semiconductor integra Method for forming buried plug contacts on semiconductor integra

1995-06-28

1997-03-04

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437195, 437228, H01L 2128

Patent

active

056078790

ABSTRACT:
A method for fabricating buried metal plug structures for multi-polysilicon layer interconnects and for concurrently making metal plugs on semiconductor integrated circuits, such as DRAM and SRAM, was achieved. The method involved forming contact opening in an insulating layer over opening in a patterned polysilicon layer. The opening in the polysilicon layer aligned over source/drain contact areas on the substrate and providing a means for forming self-aligned contact openings. Buried metal plugs in the contact openings form interconnects between the polysilicon layer and the source/drains. And, by merging the process steps, concurrently forming metal plug interconnects for contacts to semiconductor devices and first level metal. The process is applicable to the formation of bit line contacts on DRAM and SRAM circuits and simultaneously form the peripheral contact on the chip.

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