Method for forming buried layer inside a semiconductor device

Details Method for forming buried layer inside a semiconductor device Method for forming buried layer inside a semiconductor device

2000-05-31

2001-07-31

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S526000, C438S499000, C438S505000, C438S506000

Reexamination Certificate

active

06268271

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates the formation of a plurality of buried layers more particularly using as buried layers inside a semiconductor device.
2. Description of the Prior Art
Firstly, as shown in
FIG. 1A
, a semiconductor substrate
101
, nitride layer
102
and p
+
-type
103
are provided.
Then, as shown
FIG. 1B
, p
+
-type buried layers
103
are removed by the conventional etching.
Then, as shown in
FIG. 1C
, the n
+
-type ions are implanted into the semiconductor substrate
101
as a plurality of n
+
-type regions
104
located under the surface of the plurality of concave portions.
Next, as shown in
FIG. 1D
, the oxide layer
105
is deposited over the surfaces of the plurality of concave portions and the surface of the plurality of convex portions. Finally, a silicon layer
106
is formed to fill the plurality of concave portions a silicon layer and to cover the surfaces of the plurality of convex portions.
SUMMARY OF THE INVENTION
In accordance with the present invention, a method is provided for forming a plurality of buried layers that substantially reduces p
+
-type buried region defect.
In the preferred embodiment, the process steps can be reduced to fewer than are used in the prior art, also, such that economic benefits can be increased.
In the preferred embodiment, firstly, a semiconductor substrate is provided. Then, the first p
+
-type ions are implanted into the semiconductor substrate to form the p
+
-type region under the surface of semiconductor substrate. A first photoresist having a specific pattern is formed on the surface of the semiconductor substrate as an etching mask. The semiconductor substrate is etched to form a plurality of concave portions and a plurality of convex portions using the first photoresist. Then, the first photoresist is removed. A second photoresist is formed to cover the plurality of convex portions. THe n
+
-type ions are second implanted into the semiconductor substrate as a plurality of n
+
-type regions located under the surface of the plurality of concave portions using a second photoresist which covers the plurality of convex portions. The second photoresist is removed. Next, the oxide layer is deposited over the surface of the plurality of concave portions and the surface of the plurality of convex portions. The plurality of p+
+-type regions are heated to form the buried layers. The oxide layer is removed. Finally, a silicon layer is formed to fill the plurality of concave portions a silicon layer and to cover the surface of the plurality of convex portions.


REFERENCES:
patent: 4713358 (1987-12-01), Bulat et al.
patent: 4737468 (1988-04-01), Martin
patent: 5476800 (1995-12-01), Burton et al.
patent: 5536670 (1996-07-01), Hsue
patent: 5846864 (1998-12-01), Hsu

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