Method for forming buried contact electrode of semiconductor...

Details Method for forming buried contact electrode of semiconductor... Method for forming buried contact electrode of semiconductor...

2006-09-26

2009-08-18

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S021000, C438S695000, C438S702000, C438S759000, C216S065000, C216S094000, C505S410000

Reexamination Certificate

active

07576008

ABSTRACT:
Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode in a depth direction to form a plurality of continuous, isolated or mixed type electrode pattern grooves with a certain array; and (b) filling the formed grooves with a conductive ink containing a transparent conducting particle through an inkjet and then performing heat treatment to form a buried transparent electrode, the optoelectronic semiconductor device, and an apparatus for manufacturing the optoelectronic semiconductor device. In the present invention, covering loss is significantly reduced due to a buried transparent electrode so that the high efficiency of photoelectric conversion can be implemented, and there can be provided the easiness of a manufacturing process and the enhancement of productivity through the unification of etching and electrode forming processes.

REFERENCES:
patent: 7005324 (2006-02-01), Imai
patent: 7259047 (2007-08-01), Huang et al.
patent: 2004/0258842 (2004-12-01), Hamaya
patent: 2005/0158668 (2005-07-01), Bittner et al.
patent: 1020040017183 (2004-02-01), None
patent: 1020040086601 (2004-10-01), None
patent: 1020040099135 (2004-11-01), None
patent: 1020040102321 (2004-12-01), None
patent: WO 2004/055920 (2004-07-01), None

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