Method for forming bumps on a semiconductor die using applied vo

Details Method for forming bumps on a semiconductor die using applied vo Method for forming bumps on a semiconductor die using applied vo

1997-11-24

1999-12-14

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

257784, 2281805, 228 45, H01L 2144

Patent

active

060017244

ABSTRACT:
A method of forming ball bumps on a pad of a semiconductor die using aluminum wire is provided. The method includes providing an aluminum wire and a thermosonic ball bonding apparatus. The aluminum wire is held in a capillary tool of the ball bonding apparatus and a molten ball is formed on the wire using an electronic flame off (EFO). A forming gas comprising hydrogen and an inert gas, prevents the molten ball from oxidation hardening during formation thereof. Following formation, the molten ball is shaped into a ball bump by the capillary tool and then pressed against the pad while the capillary tool is vibrated. The completed die can be bonded to a substrate pad on a supporting substrate by using a bonding technique such as flip chip bonding, chip on glass bonding, chip on flex bonding, TAB bonding, and z-axis adhesive bonding.

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