Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-04
2007-09-04
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S737000, C257S738000, C438S613000, C438S632000, C438S646000
Reexamination Certificate
active
10524510
ABSTRACT:
A process for forming bumps on electrode pads for a wiring board including a substrate and a plurality of electrode pads. The process (a) forms a laminated two-layer film on the wiring board and forms a pattern of apertures at positions corresponding to the electrode pads, the laminated two-layer film including a lower layer containing an alkali-soluble radiation-nonsensitive resin composition and an upper layer containing a negative radiation-sensitive resin composition; (b) fills a low-melting metal in the aperture pattern; (c) reflows the low-melting metal by pressing or heating to form bumps; and (d) peels and removes the laminated two-layer film from the board. The laminated film including two layers with different properties permits high resolution and easy peeling.
REFERENCES:
patent: 6420255 (2002-07-01), Takahashi
patent: 6525275 (2003-02-01), Asai
patent: 2002/0130411 (2002-09-01), Cheng et al.
patent: 2003/0145949 (2003-08-01), Tanaka et al.
patent: 2006/0063366 (2006-03-01), Watanabe et al.
patent: 5-160557 (1993-06-01), None
patent: 06-350230 (1994-12-01), None
patent: 8-298369 (1996-11-01), None
patent: 8-301911 (1996-11-01), None
patent: 10-112580 (1998-04-01), None
patent: 11-15150 (1999-01-01), None
patent: 2000-208911 (2000-07-01), None
patent: 2001-11494 (2001-01-01), None
patent: 2001-189552 (2001-07-01), None
patent: 2002-139835 (2002-05-01), None
patent: 2002-170827 (2002-06-01), None
Inomata Katsumi
Iwanaga Shin-ichiro
Ohta Masaru
JSR Corporation
Le Thao P.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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