Method for forming bottle-shaped trench

Details Method for forming bottle-shaped trench Method for forming bottle-shaped trench

2006-09-05

2006-09-05

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S243000

Reexamination Certificate

active

07101802

ABSTRACT:
The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a trench and a pad stack layer formed thereon is provided. A masking layer is then formed in the lower portion of the trench. Plasma nitridation is then performed to form a nitride layer covering the sidewalls of the trench, followed by removing the masking layer to expose the sidewalls of the trench. The lower portion of the trench is then expanded by etching to form a bottle-shaped trench.

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patent: 2003/0082884 (2003-05-01), Faltermeier et al.

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