Method for forming bit lines of semiconductor devices

Details Method for forming bit lines of semiconductor devices Method for forming bit lines of semiconductor devices

1997-05-27

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438685, 257263, 257764, 257765, 257767, H01L 2144

Patent

active

060872594

ABSTRACT:
A bit line of a semiconductor device capable of obtaining low line resistance and low contact resistance, thereby achieving an improvement in the operating speed and reliability of the semiconductor device. The bit line has a multilayer structure including a Ti film, an MOCVD-TiN film and a W film sequentially formed over the semiconductor substrate. The MOCVD-TiN film serves as a diffusion barrier to suppress a reaction of tungsten, which forms the bit line, with silicon existing on a contact region during a thermal process at a high temperature such as a BPSG reflow.

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patent: 5525543 (1996-06-01), Chen
patent: 5702970 (1997-12-01), Choi
patent: 5789028 (1997-03-01), Zhao et al.
patent: 5792691 (1997-06-01), Koga
patent: 5804479 (1996-08-01), Aoki et al.
patent: 5854104 (1997-01-01), Onishi et al.
patent: 5869901 (1996-10-01), Kusuyama
patent: 5953576 (1997-09-01), Choi

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