Method for forming bit lines for semiconductor devices

Details Method for forming bit lines for semiconductor devices Method for forming bit lines for semiconductor devices

2008-03-14

2010-10-12

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S288000, C438S519000, C438S545000, C438S555000, C257S324000, C257SE21657

Reexamination Certificate

active

07811915

ABSTRACT:
A method for forming a semiconductor device includes forming a first dielectric layer over a first portion of a substrate, forming a charge storage layer over the first dielectric layer and etching a trench in the charge storage layer and the first dielectric layer, where the trench extends to the substrate. The method also includes implanting n-type impurities into the substrate to form an n-type region having a first depth and a first width and implanting p-type impurities into the substrate after implanting the n-type impurities, the p-type impurities forming a p-type region having a second depth and a second width. The method further includes forming a second dielectric layer over the charge storage layer and forming a control gate over the second dielectric layer.

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U.S. Appl. No. 11/380,971, by Weidong Qian et al., entitled “Bit Lines for Semiconductor Devices”, filed May 1, 2006; 30 pages.

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