Method for forming bit lines for semiconductor devices

Details Method for forming bit lines for semiconductor devices Method for forming bit lines for semiconductor devices

2011-07-05

2011-07-05

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C257S324000, C257SE21657, C438S288000, C438S519000, C438S545000, C438S555000

Reexamination Certificate

active

07972948

ABSTRACT:
A memory device includes a number of memory cells and a number of bit lines. Each of the bit lines includes a first region having a first width and a first depth and a second region having a second width and a second depth, where the first width is less than the second width. The first region may include an n-type impurity and the second region may include a p-type impurity.

REFERENCES:
patent: 5635415 (1997-06-01), Hong
patent: 6248635 (2001-06-01), Foote et al.
patent: 6723649 (2004-04-01), Chang et al.
patent: 6958272 (2005-10-01), Lingunis et al.
patent: 6987048 (2006-01-01), Cheng et al.
patent: 7176113 (2007-02-01), Wong et al.
patent: 7408222 (2008-08-01), Hagenbeck et al.
patent: 7811915 (2010-10-01), Qian et al.
patent: 2002/0151138 (2002-10-01), Liu
patent: 2003/0067032 (2003-04-01), Caprara et al.
patent: 2003/0104670 (2003-06-01), Wu
patent: 2004/0108540 (2004-06-01), Yoshino
patent: 2004/0110344 (2004-06-01), Huang et al.
patent: 2006/0014348 (2006-01-01), Wu
Co-pending U.S. Appl. No. 12/048,549, filed Mar. 14, 2008 entitled “Method For Forming Bit Lines For Semiconductor Devices” by Weidong Qian et al., 30 pages.

Affiliated with

Also associated with

Rating

Method for forming bit lines for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming bit lines for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming bit lines for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2667740