Method for forming bit-line of semiconductor device

Details Method for forming bit-line of semiconductor device Method for forming bit-line of semiconductor device

2006-09-05

2006-09-05

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C438S683000

Reexamination Certificate

active

07101783

ABSTRACT:
Disclosed is a method for forming a bit-line of a semiconductor device. In a line patterning process for forming a bit-line in a DRAM (Dynamic Random Access Memory) of a semiconductor device, a barrier metal layer and a tungsten layer are sequentially formed on an interlayer insulating film comprising a contact hole to fill the contact hole by a CVD (Chemical Vapor Deposition) method. Then, the barrier metal layer and the tungsten layer are removed until the interlayer insulating film is exposed, and a tungsten layer having small thickness is re-formed on the exposed interlayer insulating film by a PVD (physical Vapor Deposition) method. As a result, the bit-line area is reduced as much as the barrier metal layer removed from the upper portion of interlayer insulating film, thereby having low bit-line capacitance.

REFERENCES:
patent: 6455410 (2002-09-01), Shimizu
patent: 6670268 (2003-12-01), Shin et al.

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